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| 2SK3780-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg Ratings 200 200 73 292 30 73 1115.2 41 20 5 410 2.50 +150 -55 to +150 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < 150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=30A,L=1.98mH, VCC=48V,RG=50 EAS limited by maximum channel temperature and avalanch current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the `Transient Theemal impedance' graph Note *4:IF< -ID, -di/dt=50A/s,VCC< BVDSS,Tch< 150C = = = kV/s VDS= 200V < kV/s Note *4 Tc=25C W Ta=25C C C Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=200V VDS=160V VGS=30V ID=36.5A ID=36.5A VDS=75V VGS=0V f=1MHz VGS=0V VGS=0V VDS=0V VGS=10V VDS=25V Min. 200 3.0 Tch=25C Tch=125C Typ. Max. 5.0 25 250 100 36 Units V V A nA m S pF 12 VCC=48V ID=36.5A VGS=10V RGS=10 VCC=100V ID=73A VGS=10V IF=73A VGS=0V Tch=25C IF=73A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient 29 24 3800 5400 530 795 35 52.5 40 60 94 141 60 90 30 45 80 120 30 45 25 38 1.20 1.50 300 3.0 ns nC V ns C Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 0.305 50.0 Units C/W C/W 1 2SK3780-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 500 160 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 20V 10V 8V 140 400 120 PD [W] ID [A] 300 100 80 7V 200 60 6.5V 40 100 VGS=6.0V 20 0 0 25 50 75 100 125 150 0 0 5 10 Tc [C] VDS [V] 100 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 10 ID[A] 1 1 0.1 0.1 0.1 gfs [S] 0 1 2 3 4 5 6 7 8 9 10 1 10 100 VGS[V] ID [A] 0.15 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=6V 6.5V 7V 0.15 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=36.5A,VGS=10V RDS(on) [ ] RDS(on) [ ] 0.10 0.10 max. 0.05 0.05 8V 10V 20V typ. 0.00 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 0.00 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3780-01 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=73A,Tch=25 C 12 Vcc= 40V 10 160V 100V max. VGS(th) [V] 4.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Tch [C] Qg [nC] 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 1000 10 3 100 C [pF] 10 2 IF [A] 3 Coss 10 Crss 10 1 1 10 0 10 -1 10 0 10 1 10 2 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 1200 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=73A IAS=30A tr 1000 10 2 td(off) td(on) 800 IAS=44A tf EAV [mJ] t [ns] 600 10 1 400 IAS=73A 200 10 0 0 0 10 10 1 10 2 10 3 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3780-01 FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=48V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4 |
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